DocumentCode
400892
Title
Increasing B+ current from a microwave ion source by simultaneously utilizing new techniques
Author
Sakudo, N. ; Tazaki, Yuichi ; Matsumine, M. ; Tamashiro, Y. ; Nishimoto, R. ; Ito, H. ; Takahashi, Masaharu ; Matsunaga, Yusuke
fYear
2002
fDate
27-27 Sept. 2002
Firstpage
407
Lastpage
410
Abstract
In previous papers we reported two separate methods for enhancing B+ ion current. One was to optimize the discharge-chamber volume by comparing it with the computer-simulated magnetic field. Resultantly the modified chamber that has larger volume than the standard chamber provided B+ ion current over 13 mA. The other was to enhance the secondary electron emissivity of the chamber wall by adding MgO into the chamber material. The experiment on the standard chamber showed the 5% addition of MgO resulted in 60% increase of the B+ ion current. In this study we have utilized these two methods simultaneously, that is, we have tested the modified chamber that is made of boron nitride with MgO mixed. As a result we have obtained B+ ion current of 15 mA on an old beam line having moderate transmission.
Keywords
boron; ion implantation; ion sources; plasma sources; positive ions; 15 mA; B+ ion current; FEM program; chamber wall; discharge-chamber volume; magnetic-circuit modeling; microwave ion source; modified chamber; optimum power; plasma density; secondary electron emissivity; Boron; Electrons; Fault location; Implants; Ion sources; Magnetic fields; Magnetic materials; Paper technology; Plasma density; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location
Taos, New Mexico, USA
Print_ISBN
0-7803-7155-0
Type
conf
DOI
10.1109/IIT.2002.1258026
Filename
1258026
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