Raman and FTIR studies on nanostructure formation on silicon carbide

We report experimental results following studies on the defects induced by light and heavy high-energy ion implantation into 6H p-type and n-type silicon carbide, as well as the degree of crystalline lattice recovery after annealing in high purity argon environment at 1100 and 1600°C. We implanted silicon carbide with MeV Au and Al ions at levels of 10¹⁶ and 10¹⁷ ions/cm², and used confocal micro-Raman (MR) and Fourier-Transform Infra-Red (FTIR) optical spectroscopy techniques to characterize the silicon carbide lattice optical properties at various stages during the post-implantation annealing process. We also investigated the conditions for metallic nanoclusters formation following the destruction of the lattice during the ion implantation and influence of the thermal treatment on their evolution.