Improved Body Effect and Analog Characteristics of n-Channel MOSFET With Lateral Asymmetric Substrate Doping

Author

Kee-Yeol Na ; Ki-Ju Baek ; Jun-Kyu Kim ; Dongwon Kim ; Nam-Soo Kim ; Yeong-Seuk Kim

Author_Institution

Chungbuk Provincial Coll., Okcheon, South Korea

Volume

61

Issue

7

fYear

2014

fDate

Jul-14

Firstpage

2250

Lastpage

2256

Abstract

An n-channel MOSFET with lateral asymmetric substrate doping (LASD) is presented in this paper. The proposed LASD device has a p-well on the source side and a p-substrate on the drain side. The LASD MOSFET was designed by the simple p-well layout approach and fabricated using the 0.18 μm standard low-voltage CMOS process without any process modification. The experimental measurements showed the improved analog performances of the LASD MOSFET: higher transconductance (gm), lower drain conductance (gds), lower drain induced barrier lowering, higher transconductance generation factor (gm/I_D), and higher Early voltage (V_EA). In addition, the LASD device showed strong body-effect immunity: smaller V_T shift according to body bias and lower body bias sensitivity factor (gmb/gm).

Keywords

CMOS analogue integrated circuits; MOSFET; semiconductor doping; LASD MOSFET; LASD device; analog characteristics; body-effect immunity; drain conductance; drain induced barrier lowering; higher early voltage; higher transconductance generation factor; improved body effect; lateral asymmetric substrate doping; lower body bias sensitivity factor; n-channel MOSFET; p-substrate; p-well layout approach; size 0.18 mum; standard low-voltage CMOS process; Current measurement; Doping; Logic gates; MOSFET; Performance evaluation; Transconductance; Voltage measurement; Analog performances; Early voltage (({mathrm V} _{{mathbf {EA}}})); Early voltage (VEA); body effect; body sensitivity factor (({mathrm g}_{{mathbf {mb}}}/{mathrm g}_{{mathbf {m}}})); body sensitivity factor (gmb/gm); channel length modulation (CLM); drain conductance (({mathrm {g}} _{{mathbf {ds}}})); drain conductance (gds); drain induced barrier lowering (DIBL); lateral asymmetric substrate doping (LASD); transconductance (({mathrm g} _{{mathbf {m}}})); transconductance (gm); transconductance generation factor (({mathrm g}_{{mathbf {m}}}/{mathrm I}_{{mathbf {D}}})); transconductance generation factor (gm/ID);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2320897

Filename

6814917