Atomistic calculation of electronic states in III-V nitride quantum dots

Author

Saito, T. ; Arakawa, Y.

Author_Institution

Center for Collaborative Res., Tokyo Univ., Japan

fYear

2003

fDate

14-16 Oct. 2003

Firstpage

1

Lastpage

4

Abstract

Atomistic calculations of the electronic states in In_0.2Ga_0.8N/GaN and GaN/AlN quantum dots (QDs) have been carried out using a polarization-potential-dependent sp³ tight-binding method. A valence-force-field method is used for the strain distribution, and a finite-difference method for the polarization-induced potential and field. We find that a strong built-in electric field is induced in the QDs due to the polarization. The field causes the quantum-confined Stark effect in the QDs; i.e., red-shifted transition energies and a spatial separation of electron and hole wave functions.

Keywords

III-V semiconductors; VB calculations; aluminium compounds; finite difference methods; gallium compounds; indium compounds; quantum confined Stark effect; semiconductor quantum dots; tight-binding calculations; wide band gap semiconductors; GaN-AlN; III-V nitride quantum dots; In_0.2Ga_0.8N-GaN; atomistic calculation; electronic states; finite-difference method; polarization-potential-dependent sp³ tight-binding method; quantum-confined Stark effect; red-shifted transition energy; strain distribution; valence-force-field method; Atomic layer deposition; Bonding; Capacitive sensors; Charge carrier processes; Energy states; Gallium nitride; III-V semiconductor materials; Piezoelectric polarization; Quantum dots; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on

Print_ISBN

0-7803-7992-6

Type

conf

DOI

10.1109/NUSOD.2003.1259025

Filename

1259025