DocumentCode :
401469
Title :
Analysis of thermal response characteristics of semiconductor by self-consistent electro-opto-thermal simulation
Author :
Hatakoshi, Gen-ichi ; Ishikawa, Masayuki
Author_Institution :
Toshiba Res. Consulting Corp., Kawasaki, Japan
fYear :
2003
fDate :
14-16 Oct. 2003
Firstpage :
27
Lastpage :
28
Abstract :
Thermal response characteristics ot output power in semiconductor lasers were analyzed. Refractive index changes caused by a rise in temperature had a significant effect on the output-power stability under pulsed operation for lasers with a weakly confined guided-mode.
Keywords :
laser stability; refractive index; semiconductor device models; semiconductor lasers; temperature distribution; thermo-optical effects; output-power stability; pulsed laser operation; refractive index; self-consistent electro-opto-thermal simulation; semiconductor lasers; thermal response characteristics; weakly confined guided-mode; Analytical models; Laser modes; Laser stability; Laser transitions; Optical pulses; Power generation; Power lasers; Refractive index; Semiconductor lasers; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on
Print_ISBN :
0-7803-7992-6
Type :
conf
DOI :
10.1109/NUSOD.2003.1259035
Filename :
1259035
Link To Document :
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