DocumentCode
401469
Title
Analysis of thermal response characteristics of semiconductor by self-consistent electro-opto-thermal simulation
Author
Hatakoshi, Gen-ichi ; Ishikawa, Masayuki
Author_Institution
Toshiba Res. Consulting Corp., Kawasaki, Japan
fYear
2003
fDate
14-16 Oct. 2003
Firstpage
27
Lastpage
28
Abstract
Thermal response characteristics ot output power in semiconductor lasers were analyzed. Refractive index changes caused by a rise in temperature had a significant effect on the output-power stability under pulsed operation for lasers with a weakly confined guided-mode.
Keywords
laser stability; refractive index; semiconductor device models; semiconductor lasers; temperature distribution; thermo-optical effects; output-power stability; pulsed laser operation; refractive index; self-consistent electro-opto-thermal simulation; semiconductor lasers; thermal response characteristics; weakly confined guided-mode; Analytical models; Laser modes; Laser stability; Laser transitions; Optical pulses; Power generation; Power lasers; Refractive index; Semiconductor lasers; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on
Print_ISBN
0-7803-7992-6
Type
conf
DOI
10.1109/NUSOD.2003.1259035
Filename
1259035
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