Title :
Designing high-power single-frequency lasers
Author_Institution :
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany
Abstract :
The development of GaAs-based ridge waveguide (RW) DFB lasers emitting below 1 μm is presented in the paper. The major modelling aspects including the device structure, fabrication procedure and experimental results are discussed.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; laser frequency stability; optical fabrication; ridge waveguides; semiconductor device models; semiconductor process modelling; waveguide lasers; DFB lasers; GaAs-based ridge waveguide; device structure; fabrication procedure; high-power single-frequency lasers; Bragg gratings; Distributed Bragg reflectors; Distributed feedback devices; Equations; Laser feedback; Laser modes; Optical coupling; Optical design; Threshold current; Waveguide lasers;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on
Print_ISBN :
0-7803-7992-6
DOI :
10.1109/NUSOD.2003.1259037
