Title :
Thermodynamic designed energy model
Author :
Bandelow, U. ; Gajewski, H. ; Hünlich, R.
Author_Institution :
Weierstras Inst. for Appl. Anal. & Stochastics, Berlin, Germany
Abstract :
A thermodynamic designed energy model for semiconductor devices is discussed. A system of evolution equations based on an expression for the density of the free energy is derived. First principles such as entropy maximum principle and the principle of partial local equilibrium are applied. The free energy is assumed as the sum of the internal free energy and the electrostatic field energy. A 1.55 μm RW MQW laser is used in the simulations.
Keywords :
electric fields; free energy; maximum entropy methods; quantum well lasers; ridge waveguides; semiconductor device models; temperature distribution; thermo-optical effects; waveguide lasers; 1.55 mum; RW MQW laser; electrostatic field energy; energy model; entropy maximum principle; free energy; partial local equilibrium principle; semiconductor devices; Cause effect analysis; Differential equations; Laser modes; Optical devices; Quantum well lasers; Semiconductor devices; Semiconductor lasers; Stochastic processes; Temperature distribution; Thermodynamics;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on
Print_ISBN :
0-7803-7992-6
DOI :
10.1109/NUSOD.2003.1259039
