Amplification and saturation properties of asymmetrical multiple quantum-well traveling wave semiconductor optical amplifiers

Author

Lysak, V.V. ; Kawaguchi, H. ; Katayama, T. ; Sukhoivanov, I.A.

Author_Institution

Kharkov Nat. Univ. of Radio Electron., Ukraine

fYear

2003

fDate

14-16 Oct. 2003

Firstpage

74

Lastpage

75

Abstract

A numerical model for calculation of the steady state gain properties for asymmetrical multiple quantum-well travelling wave semiconductor optical amplifiers (AMQW TW SOAs) has been newly developed. This model consists from the rate equation system for carriers in each quantum well and integrated gain model. Using this model the gain spectra and saturation characteristics for a 6 AQW TW SOA is calculated. The results show the AMQW SOA has a wide bandwidth of about 137 nm and a large saturation power of -8.8 dBm at 202 mA.

Keywords

optical saturation; quantum well lasers; semiconductor device models; semiconductor optical amplifiers; 202 mA; amplification; gain spectra; integrated gain model; multiple quantum-well traveling wave; rate equation system; saturation properties; semiconductor optical amplifiers; Electrons; Equations; Nonlinear optics; Optical materials; Optical pumping; Optical saturation; Power system modeling; Quantum well devices; Semiconductor optical amplifiers; Steady-state;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on

Print_ISBN

0-7803-7992-6

Type

conf

DOI

10.1109/NUSOD.2003.1259054

Filename

1259054