High gain and ultra wideband SiGe/BiCMOS cascaded single stage distributed amplifier for 4G RF front-end applications

Author

Koon, K.L. ; Hu, Zhirun ; Aghvami, Hamid ; Rezazadeh, Ali A.

Author_Institution

Dept. of Electron. Eng., King´´s Coll., London, UK

Volume

3

fYear

2003

fDate

7-10 Sept. 2003

Firstpage

2180

Abstract

A high gain, ultra wideband and low noise SiGe/BiCMOS distributed amplifier for a 4G multiband, multimode mobile terminal is presented. The proposed SiGe/BiCMOS cascaded single stage distributed amplifier (CSSDA) has shown 21 dB power gain with power flatness of ± 0.5 dB and return loss less than -10 dB for both input and output over the frequency range from 300 KHz to 15 GHz. This is the first SiGe/BiCOMS HBT based-CSSDA, which combines the active load loss compensation algorithm to achieve the ultra-high gain over one decade of bandwidth using commercially available SiGe/BiCMOS technology.

Keywords

4G mobile communication; BiCMOS integrated circuits; Ge-Si alloys; distributed amplifiers; heterojunction bipolar transistors; radiofrequency amplifiers; semiconductor materials; wideband amplifiers; 300 KHz to 15 GHz; 4G mobile terminal; CSSDA; RF front-end application; SiGe; active load loss compensation algorithm; cascaded single stage distributed amplifier; ultra wideband amplifier; Bandwidth; BiCMOS integrated circuits; CMOS technology; Distributed amplifiers; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance; Radio frequency; Silicon germanium; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Personal, Indoor and Mobile Radio Communications, 2003. PIMRC 2003. 14th IEEE Proceedings on

Print_ISBN

0-7803-7822-9

Type

conf

DOI

10.1109/PIMRC.2003.1259102

Filename

1259102