DocumentCode
40156
Title
Crystallographic Effects on Energy Dissipation in High-
Silicon Bulk-Mode Resonators
Author
Cheng Tu ; Lee, J.E.-Y.
Author_Institution
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, China
Volume
22
Issue
2
fYear
2013
fDate
Apr-13
Firstpage
262
Lastpage
264
Abstract
This letter reports measured results of quality factor (Q ) for single-crystal silicon square-plate resonators in relation to their crystal orientation within the (100) plane. Results from both the Lamé and extensional modes oriented in the 〈110〉 and 〈100〉 axes are presented. Q appears to be dependent on orientation for the Lamé mode. In the extensional mode, there is no significant difference in Q between the two axes due to the dominance of anchor loss. These trends agree well with the brief theoretical analysis that we have described here to provide a quantitative basis for interpreting the trends between Q and orientation observed in our measurements.
Keywords
Q-factor; crystal orientation; crystallography; elemental semiconductors; micromechanical resonators; silicon; Lamé modes; Si; crystal orientation; crystallographic effects; energy dissipation; extensional modes; high-Q silicon bulk-mode resonators; microelectromechanical system resonator; quality factor; single-crystal silicon square-plate resonators; Acoustics; Crystals; Micromechanical devices; Optical resonators; Q factor; Q measurement; Silicon; Akhiezer loss; anchor loss; elastic anisotropy; microelectromechanical systems (MEMS) resonator; quality factor;
fLanguage
English
Journal_Title
Microelectromechanical Systems, Journal of
Publisher
ieee
ISSN
1057-7157
Type
jour
DOI
10.1109/JMEMS.2013.2239259
Filename
6428585
Link To Document