• DocumentCode
    40156
  • Title

    Crystallographic Effects on Energy Dissipation in High- Q Silicon Bulk-Mode Resonators

  • Author

    Cheng Tu ; Lee, J.E.-Y.

  • Author_Institution
    Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, China
  • Volume
    22
  • Issue
    2
  • fYear
    2013
  • fDate
    Apr-13
  • Firstpage
    262
  • Lastpage
    264
  • Abstract
    This letter reports measured results of quality factor (Q ) for single-crystal silicon square-plate resonators in relation to their crystal orientation within the (100) plane. Results from both the Lamé and extensional modes oriented in the 〈110〉 and 〈100〉 axes are presented. Q appears to be dependent on orientation for the Lamé mode. In the extensional mode, there is no significant difference in Q between the two axes due to the dominance of anchor loss. These trends agree well with the brief theoretical analysis that we have described here to provide a quantitative basis for interpreting the trends between Q and orientation observed in our measurements.
  • Keywords
    Q-factor; crystal orientation; crystallography; elemental semiconductors; micromechanical resonators; silicon; Lamé modes; Si; crystal orientation; crystallographic effects; energy dissipation; extensional modes; high-Q silicon bulk-mode resonators; microelectromechanical system resonator; quality factor; single-crystal silicon square-plate resonators; Acoustics; Crystals; Micromechanical devices; Optical resonators; Q factor; Q measurement; Silicon; Akhiezer loss; anchor loss; elastic anisotropy; microelectromechanical systems (MEMS) resonator; quality factor;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2013.2239259
  • Filename
    6428585