DocumentCode
402235
Title
An original SiGe active differential output power splitter for millimetre-wave applications
Author
Viallon, Christophe ; Tournier, E. ; Graffeuil, J. ; Parra, Thieny
Author_Institution
LAAS, CNRS, Toulouse, France
Volume
1
fYear
2003
fDate
7-9 Oct. 2003
Firstpage
1
Abstract
This paper deals with an original design of an active power splitter featuring a differential output presenting a greatly enhanced even mode rejection. The proposed circuit consists in two cascaded common emitter and common collector differential pairs. For achieving the best performance, it is shown that each of these two differential pairs requires a specific common node to ground impedance that is discussed. The circuit has been implemented on a 0.25μm SiGe BiCMOS process and exhibits anticipated phase and amplitude broadband unbalance less than 6.5° and 0.6 dB respectively all over the 6-27 GHz frequency range. At 20 GHz, a common mode rejection ratio better than 43 dB is predicted, i.e. a maximum 0.12 dB /0.35° output signal unbalance.
Keywords
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC power amplifiers; baluns; differential amplifiers; wideband amplifiers; 6 to 27 GHz; BiCMOS process; SiGe; active baluns; active differential output power splitter; amplitude broadband unbalance; cascaded differential pairs; common collector differential pairs; common emitter differential pairs; common mode rejection ratio; differential amplifier; enhanced even mode rejection; ground impedance; millimetre-wave applications; phase broadband unbalance; BiCMOS integrated circuits; Costs; Differential amplifiers; Frequency; Germanium silicon alloys; Impedance matching; Microwave circuits; Power generation; Silicon germanium; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003. 33rd European
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMC.2003.1262203
Filename
1262203
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