Double YIG band-stop resonators on silicon membrane

Author

Sajin, George ; Marcelli, Romolo ; Cismaru, Alina ; Craciunoiu, Florea

Author_Institution

Nat. Res. & Dev. Inst. for Microtechnologies, Bucharest, Romania

Volume

1

fYear

2003

fDate

7-9 Oct. 2003

Firstpage

135

Abstract

In this paper is presented a microwave tunable band-stop configuration based on the combination of two cascaded magnetostatic wave resonators, working at frequencies greater than 10 GHz. The structure has been obtained by coupling YIG film straight edge resonators (SER) excited by magnetostatic waves (MSW), coupled to a microstrip line on a micromachined silicon membrane. Measurements performed at different DC biasing magnetic fields demonstrate a tunability between 10 GHz and 17 GHz. The attenuation ranges between 20 and 25 dB at the central frequency domain (11 - 12 GHz and 13 - 16 GHz) and between 34 and 40 dB at the limits of the frequency domain (10 - 11 GHz ... 16 - 17 GHz).

Keywords

garnets; magnetic microwave devices; magnetostatic wave devices; micromechanical resonators; microstrip resonators; silicon; yttrium compounds; 10 to 17 GHz; DC biasing magnetic fields; cascaded magnetostatic wave resonators; double band-stop resonators; garnet film straight edge resonators; micromachined silicon membrane; microstrip line; microwave tunable band-stop configuration; Biomembranes; Couplings; Frequency domain analysis; Magnetic field measurement; Magnetic films; Magnetostatic waves; Microstrip resonators; Resonant frequency; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2003. 33rd European

Print_ISBN

1-58053-834-7

Type

conf

DOI

10.1109/EUMC.2003.1262236

Filename

1262236