10 W high efficiency 14 V HBT power amplifier for space applications

Author

Gallou, N. Le ; Villemazet, J.F. ; Cogo, B. ; Cazaux, J.L. ; Mallet, A. ; Lapierre, L.

Author_Institution

Alcatel Espace, Toulouse, France

Volume

1

fYear

2003

fDate

7-9 Oct. 2003

Firstpage

273

Abstract

This paper presents the first development of a space-borne power amplifier using the recently developed high breakdown, high Power HBT HB20S process of UMS. The inverse F class hybrid power amplifier has been designed using intensive simulation methods developed at Alcatel Space for MMICs, allowing very high performances to be reached without manual tuning. The results of 10 W/PAE>65% obtained with a single chip at 1.5 GHz demonstrate the capability of the process to handle very high power densities and efficiencies.

Keywords

MMIC power amplifiers; UHF bipolar transistors; UHF integrated circuits; UHF power amplifiers; bipolar integrated circuits; heterojunction bipolar transistors; space vehicle electronics; 1.5 GHz; 10 W; 65 percent; Alcatel Space MMIC simulation methods; HBT power amplifier; PAE; UMS high breakdown high power HBT HB20Sprocess; inverse F class hybrid power amplifier design; power density; power efficiency; space applications; space-borne power amplifier; Circuit simulation; Electric breakdown; Fingers; Heterojunction bipolar transistors; High power amplifiers; Impedance; Libraries; Space technology; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2003. 33rd European

Print_ISBN

1-58053-834-7

Type

conf

DOI

10.1109/EUMC.2003.1262272

Filename

1262272