Flip-chip integration of power HEMTs: a step towards a GaN MMIC technology

Author

Seemann, Klaus ; Ramberger, Suitbert ; Tessmann, Axel ; Quay, Rüdiger ; Schneider, Joachim ; Riessle, M. ; Walcher, Herbert ; Kuri, Michael ; Kiefer, Rudolf ; Schlechtweg, Michael

Author_Institution

Dept. of Electr. Eng., Erlangen-Nurnberg Univ., Erlangen, Germany

Volume

1

fYear

2003

fDate

7-9 Oct. 2003

Firstpage

383

Abstract

In this paper, flip-chip integration is demonstrated as a method for faster progress towards a GaN MMIC technology by separating the development of active devices and passive matching circuits. This approach offers distinct advantages in the verification of passive components realized on a 2" SiC substrate. A proven 0.3μm GaAs PHEMT technology was used for the transistors that allowed to reproducibly verify both, the flip-chip transitions and the behaviour of the coplanar SiC structures. As an example, three X-band amplifiers in flip-chip technology are presented that demonstrate the feasibility of the technology.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; flip-chip devices; gallium compounds; integrated circuit packaging; power HEMT; wide band gap semiconductors; GaN; MMIC technology; X-band amplifiers; active devices; coplanar structures; flip-chip integration; matching networks; passive matching circuits; power HEMT; Gallium arsenide; Gallium nitride; Gold; HEMTs; Integrated circuit technology; MMICs; MODFETs; Power amplifiers; Silicon carbide; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2003. 33rd European

Print_ISBN

1-58053-834-7

Type

conf

DOI

10.1109/EUMC.2003.1262299

Filename

1262299