Title :
Amorphous GaN: Optoelectronic properties and device potential
Author :
Trodahl, H.J. ; Ruck, B.J. ; Koo, A. ; Lanke, U.D. ; Bittar, A.
Author_Institution :
Sch. of Chem. & Phys. Sci., Victoria Univ. of Wellington, New Zealand
fDate :
29 June-3 July 2003
Abstract :
This paper describes the preparation of an amorphous form of hetero-polar tetrahedrally bonded GaN by ion-assisted deposition. The structure, including composition and bonding configurations, has been subjected to thorough investigation to establish the optimum deposition conditions. The optoelectronic properties of the best films have been measured to evaluate their potential in UV-blue detectors and/or emitters. Currently the best films have shown clear photoconductivity, with sensitivity peaking in the UV, but no useful luminescence has yet been found.
Keywords :
III-V semiconductors; amorphous semiconductors; gallium compounds; ion beam assisted deposition; photoconductivity; photoluminescence; semiconductor growth; semiconductor thin films; wide band gap semiconductors; GaN; UV-blue detectors; amorphous GaN; bonding configurations; composition; emitters; films; hetero-polar tetrahedrally bonded GaN; ion-assisted deposition; luminescence; optimum deposition conditions; optoelectronic properties; photoconductivity; preparation; sensitivity; structure; Amorphous materials; Bonding; Chemicals; Composite materials; Crystalline materials; Crystallization; Detectors; Gallium nitride; Optical films; Photoconductivity;
Conference_Titel :
Transparent Optical Networks, 2003. Proceedings of 2003 5th International Conference on
Print_ISBN :
0-7803-7816-4
DOI :
10.1109/ICTON.2003.1264615
