Vertical-cavity surface-emitting laser for mid-infrared generation

Author

Morozov, Yuri ; Nefedov, Igor ; Aleshkin, Vladimir

Author_Institution

Inst. of Radio Eng. & Electron., Acad. of Sci., Saratov, Russia

Volume

1

fYear

2003

fDate

29 June-3 July 2003

Firstpage

243

Abstract

The model of laser making use of GaAs/AlGaAs structure lattice nonlinearity for mid-infrared emission is proposed. Here, two-frequency near-infrared simultaneous oscillations are mixed in vertical-cavity surface-emitting device. The power of mid-infrared emission at wavelength about 10 μm is shown to be 0.1-1 μW in continuous wave operation.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; infrared sources; nonlinear optics; quantum well lasers; semiconductor device models; surface emitting lasers; 0.1 to 1 muW; 10 micron; GaAs-AlGaAs; GaAs/AlGaAs structure lattice nonlinearity; continuous wave operation; mid-infrared emission; mid-infrared generation; quantum well lasers; two-frequency near-infrared simultaneous oscillations; vertical-cavity surface-emitting laser; Artificial intelligence; Frequency; Gallium arsenide; Laser modes; Laser theory; Lattices; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2003. Proceedings of 2003 5th International Conference on

Print_ISBN

0-7803-7816-4

Type

conf

DOI

10.1109/ICTON.2003.1264624

Filename

1264624