• DocumentCode
    404138
  • Title

    Improved crystallization temperature and interfacial properties of HfO2 gate dielectrics by adding Ta2O5 with TaN metal gate

  • Author

    Yu, Xiongfei ; Zhu, Chunxiang ; Zhang, Qingchun ; Wu, Nan ; Hu, Hang ; Li, M.F. ; Chin, Albert ; Chan, D.S.H. ; Wang, W.D. ; Kwong, Dim-Lee

  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    62
  • Lastpage
    63
  • Abstract
    This paper presents high-k value Ta2O5 incorporated into the HfO2 film to improved crystallization temperature and interfacial properties. Here we reported the (HfO2)0.57(Ta2O5)0.43 MOSFET with TaN metal gate.
  • Keywords
    MOSFET; crystallisation; dielectric devices; dielectric materials; dielectric thin films; hafnium compounds; leakage currents; rapid thermal annealing; tantalum compounds; (100)Si substrate; (HfO2)0.57(Ta2O5)0.43TaN; HfO2 film; HfO2 gate dielectrics; MOS-C device; NMOSFET device; Si; TaN metal gate; crystallization temperature; high-k value Ta2O5 incorporation; interfacial properties; Amorphous materials; Annealing; Atomic layer deposition; Crystallization; Dielectric substrates; Hafnium oxide; Leakage current; MOSFET circuits; Surface cleaning; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1271996
  • Filename
    1271996
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=404138