SPICE modeling of double diffused vertical power MOSFETs exposed to gamma radiation

Author

Deng, Yanqing ; Ytterdal, Trond ; Fjeldly, Tor A. ; Shur, Michael S.

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

138

Lastpage

139

Abstract

A SPICE device model for vertical power MOSFETs has been developed for simulating the degradation effects caused by gamma radiation on electrical performance. The total dose radiation effects and dynamic effects associated with radiation flux variations and annealing have been modeled and incorporated into the device model. The model is implemented into the circuit simulator AIM-SPICE. Our pre-radiation model shows excellent agreement with experimental data of IRF 130 and NTE2392 VDMOS. The simulation results for the total dose and transient radiation quantitatively and predictively show the degradation of device performance.

Keywords

SPICE; annealing; gamma-ray effects; power MOSFET; semiconductor device models; NTE2392 VDMOS; SPICE modeling; annealing; circuit simulation AIM-SPICE; degradation effects; device performance; dose radiation effects; double diffused vertical power MOSFET; dynamic effects; electrical performance; gamma radiation; radiation flux variations; transient radiation; Annealing; Circuit simulation; Degradation; FETs; Gamma rays; MOSFETs; Radiation effects; SPICE; Space vector pulse width modulation; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272031

Filename

1272031