• DocumentCode
    404141
  • Title

    The impact of scaling on volume inversion in symmetric double-gate MOSFETs

  • Author

    Lin, C.-H. ; He, J. ; Xi, X. ; Kam, H. ; Niknejad, A.M. ; Chan, M. ; Hu, C.

  • Author_Institution
    Dept. of EECS, California Univ., Berkeley, CA, USA
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    148
  • Lastpage
    149
  • Abstract
    In this paper, 2D and 3D DG structure are simulated by an ISE device simulator. As device scale down, volume inversion is a strong function of substrate doping and channel length. Therefore, an accurate and elaborate volume inversion model is essential for DG compact modeling.
  • Keywords
    MOSFET; Poisson equation; semiconductor device models; double-gate compact modeling; substrate doping; symmetric double-gate MOSFET; volume inversion model; CMOS technology; Degradation; Doping; Electrons; MOSFET circuits; Semiconductor films; Semiconductor process modeling; Silicon; Substrates; Thickness control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1272036
  • Filename
    1272036
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=404141