DocumentCode
404142
Title
Impact of metal gate work function on gate leakage of MOSFETs
Author
Hou, Y.T. ; Li, M.F. ; Low, Tony ; Kwong, D.L.
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
154
Lastpage
155
Abstract
A systematic study of tunneling leakage current in metal gate MOFETs is carried out and the physical model used were corroborated by experiments. Effects of metal gate work function on tunnelling characteristics and the criterion for choosing suitable metal gate results in significant reduction of gate-SDE tunnelling. As a result, SOI FETs exhibit much lower off-state leakage than the bulk ones, particularly for high-K dielectric, indicating their superior scalability in terms of leakage currents.
Keywords
MOSFET; dielectric materials; elemental semiconductors; leakage currents; semiconductor device models; silicon; silicon-on-insulator; tunnelling; work function; SOI FET; Si; dielectric materials; gate leakage; metal gate MOFET; metal gate work function; physical model; tunneling leakage current; Charge carrier processes; Electrodes; Electrons; FETs; Gate leakage; High-K gate dielectrics; Leakage current; MOSFETs; Semiconductor device modeling; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272039
Filename
1272039
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