Chlorine-hydrogen ECR etching of InGaAsP/InP

Author

Welty, R.J. ; Reinhardt, C.E. ; Han, I.Y. ; Du, Y. ; Yoo, S.J.

Author_Institution

Center for Micro & Nano Technol., Lawrence Livermore Nat. Lab., Berkeley, CA, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

422

Lastpage

423

Abstract

Electron cyclotron resonance etching (ECR) of InP based materials using a plasma containing Cl₂ and H₂ is reported in this paper. The etch rates for InP and InGaAsP using Cl₂/H₂ plasma at 1mTorr(ECR power=850 W, RF power=250 W) are illustrated. AFM measurements are done on both the sidewall of the etched facet and the surface. The sidewall rms roughness is 3.67 nm and the surface is 1.01 nm. Fabry-Perot resonance measurements are done to determine the scattering loss of optical waveguides (w=2 μm) etched by this technique and show a low loss of 1.2 dB/cm.

Keywords

Fabry-Perot resonators; III-V semiconductors; atomic force microscopy; cyclotron resonance; etching; gallium compounds; indium compounds; optical waveguides; surface roughness; 1.01 nm; 250 W; 3.67 nm; 850 W; AFM measurement; Fabry-Perot resonance; InGaAsP-InP; InP based materials; atomic force microscopy; chlorine-hydrogen ECR etching; electron cyclotron resonance; optical waveguides; scattering loss; sidewall rms roughness; surface roughness; Etching; Indium phosphide; Optical scattering; Optical surface waves; Plasma applications; Plasma materials processing; Plasma measurements; Resonance; Rough surfaces; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272163

Filename

1272163