Metal-molecule-semiconductor heterostructures for nanoelectronic applications

Author

Lodha, Saurabh ; Janes, David B.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

446

Lastpage

447

Abstract

The present work focuses on metal-molecule-semiconductor (Au-molecule-GaAs) heterostructures. Four probe I-V measurements on the Au-molecule-GaAs device was calculated at room temperature. The presence of the molecular layer lower the effective barrier height due to the relatively low dielectric constant of the molecules and in some cases, the net dipole moment of the molecules. FTIR spectra was explained for 1-octadecanethiol (ODT) monolayer on GaAs.

Keywords

Fourier transform spectra; III-V semiconductors; gallium arsenide; gold; infrared spectra; nanoelectronics; organic compounds; permittivity; semiconductor heterojunctions; semiconductor thin films; 1-octadecanethiol monolayer; 293 to 298 K; Au-GaAs; Au-molecule-GaAs; FTIR spectra; GaAs substrate; dielectric constant; dipole moment; four probe I-V measurements; metal-molecule-semiconductor heterostructures; molecular layer; nanoelectronic applications; room temperature; Application software; Contacts; Crystallization; Gallium arsenide; Nanoscale devices; Power engineering and energy; Schottky barriers; Semiconductivity; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272177

Filename

1272177