DocumentCode
404179
Title
Compact models for silicon carbide power devices
Author
McNutt, Ty ; Hefner, Allen ; Mantooth, Alan ; Berning, David ; Singh, Ranbir
Author_Institution
Arkansas Univ., Fayetteville, AR, USA
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
472
Lastpage
473
Abstract
In order for circuit designers to fully utilize the advantages of the new SiC power device technologies, compact models are needed in circuit and system simulation tools. Models of silicon carbide power device characteristics were presented in this paper. Physics based models of VDMOSFET, output characteristics and switching vs gate resistance characteristics of SiC DiMOSFET were presented in this paper.
Keywords
power MOSFET; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; SiC DiMOSFET; VDMOSFET; silicon carbide power device; silicon carbide power devices modeling; simulation; switching gate resistance; Breakdown voltage; Epitaxial layers; MOSFETs; Power system modeling; Predictive models; Semiconductor process modeling; Silicon carbide; Surface resistance; Temperature dependence; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272197
Filename
1272197
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