DocumentCode
405289
Title
Enhancement of light extraction of GaN-based LED with introducing microstructure array
Author
Lin, Chao-Ying ; Lee, Tsung-Xian ; Ma, Shi-Xin ; Sun, Ching-Cherng
Author_Institution
Inst. of Opt. Sci., Nat. Central Univ., Chung-li, Taiwan
Volume
1
fYear
2003
fDate
15-19 Dec. 2003
Abstract
Optical models for simulating light extraction efficiency of an GaN-based LED chip is presented. We propose to introduce a periodic sharpening structure on the interface between the sapphire and the n-GaN of a GaN-based LED to obtain as high as 73% in light extraction efficiency.
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; optical arrays; periodic structures; sapphire; GaN-Al2O3; GaN-based LED; light extraction; light extraction efficiency; microstructure array; optical model; periodic sharpening structure; sapphire; Absorption; Chaos; Light emitting diodes; Light scattering; Optical arrays; Optical scattering; Periodic structures; Rough surfaces; Sun; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1274505
Filename
1274505
Link To Document