Improved characteristics of reactive-ion-etching damage for n-GaN epitaxial layers after post-etch treatments

Author

Chang, J.Y. ; Hong, H.E. ; Yee, H.H.

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Taipei Univ. of Techn., Taiwan

Volume

1

fYear

2003

fDate

15-19 Dec. 2003

Abstract

Reactive ion etched (RIE) surfaces of n-type GaN epitaxial films were investigated It is found that the recovery of crystal damage in optical properties can be achieved up to 60-65% of the photoluminescence (PL) peaks before RIE processing, for the samples thermally annealed at 750 ° C for 3 minutes. By using transmission-line model, it is evident that KOH surface treatment prior to contact deposition is more effective in lowering contact resistance than that of the damaged surface only restored by RTA processing.

Keywords

III-V semiconductors; gallium compounds; optical films; photoluminescence; potassium compounds; rapid thermal annealing; sputter etching; wide band gap semiconductors; 3 min; 750 C; GaN; GaN epitaxial film; KOH; KOH surface treatment; RIE processing; RTA processing; crystal damage; n-GaN epitaxial layer; optical property; photoluminescence; post-etch treatment; reactive-ion-etching damage; transmission-line model; Annealing; Epitaxial layers; Etching; Gallium nitride; Optical films; Particle beam optics; Photoluminescence; Surface resistance; Surface treatment; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on

Print_ISBN

0-7803-7766-4

Type

conf

DOI

10.1109/CLEOPR.2003.1274787

Filename

1274787