DocumentCode :
405539
Title :
Enhanced visible photoluminescence of multienergy silicon ion implanted SiO2 films
Author :
Yu, Kuo-Cheng ; Lin, Gong-Ru
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
1
fYear :
2003
fDate :
15-19 Dec. 2003
Abstract :
Complete activation of irradiative defects in multirecipe Si+-implanted PECVD grown 5000 nm-thick SiO2 on Si via annealing at 1100 °C in Ar ambient for 60 min has been observed with maximum visible photoluminescence at 442 nm.
Keywords :
argon; elemental semiconductors; ion implantation; optical films; photoluminescence; silicon compounds; 1100 C; 442 nm; 5000 nm; 60 min; Ar; Ar ambient; SiO2; enhanced visible photoluminescence; irradiative defect; multienergy silicon ion implanted SiO2 film; Annealing; Argon; Photoluminescence; Semiconductor films; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
Type :
conf
DOI :
10.1109/CLEOPR.2003.1274789
Filename :
1274789
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=405539
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