DocumentCode
405545
Title
GaN-based blue laser diodes with deeply etched high-reflectivity DBR mirrors
Author
Saitoh, Tadashi ; Kumagai, Masami ; Wang, Hailong ; Tawara, Takehiko ; Nishida, Toshio ; Akasaka, Testuya ; Kobayashi, Naoki
Author_Institution
NTT Basic Res. Labs., NTT Corp., Kanagawa, Japan
Volume
1
fYear
2003
fDate
15-19 Dec. 2003
Abstract
A high mirror reflectivity of 62% is obtained for InGaN/GaN lasers using a deeply etched semiconductor/air DBR structure. The optimum design for the DBR mirrors with tilted sidewalls differs from the conventional λ/(4n) design.
Keywords
III-V semiconductors; distributed Bragg reflectors; etching; gallium compounds; indium compounds; optical design techniques; optical fabrication; reflectivity; semiconductor lasers; wide band gap semiconductors; DBR mirror optimum design; GaN-based blue laser diodes; InGaN-GaN; InGaN/GaN lasers; deeply etched high-reflectivity DBR mirrors; deeply etched semiconductor-air DBR structure; Diode lasers; Distributed Bragg reflectors; Etching; Gallium nitride; Mirrors; Optical design; Optical refraction; Pump lasers; Reflectivity; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1274795
Filename
1274795
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