• DocumentCode
    40559
  • Title

    Efficient Modeling and Simulation of Graphene Devices With the LOD-FDTD Method

  • Author

    Ahmed, Ishtiaq ; Eng Huat Khoo ; Erping Li

  • Author_Institution
    Electron. & Photonics Dept., Inst. of High Performance Comput., Singapore, Singapore
  • Volume
    23
  • Issue
    6
  • fYear
    2013
  • fDate
    Jun-13
  • Firstpage
    306
  • Lastpage
    308
  • Abstract
    The intraband term of the graphene electronic model is incorporated into Maxwell equations, and then the locally one-dimensional finite difference time domain (LOD-FDTD) method is applied to simulate graphene devices efficiently. Numerical results of the approach are compared with the explicit FDTD method. At Courant Friedrich Levy number (CFLN) equal to 100, the proposed approach is approximately 60% faster in terms of simulation time and with reasonable accuracy as compared to the FDTD method.
  • Keywords
    Maxwell equations; finite difference time-domain analysis; graphene; C; CFLN; Courant Friedrich Levy number; LOD-FDTD method; Maxwell equations; graphene devices; graphene electronic model; locally 1D finite difference time domain; Courant Friedrich Levy (CFL) limit; finite difference time domain (FDTD); graphene; locally one-dimensional FDTD (LOD-FDTD);
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2013.2258463
  • Filename
    6509991
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=40559