Study on extremely thin base SiGe:C HBTs featuring sub 5-ps ECL gate delay

Author

Tominari, Tatsuya ; Wada, Shinichro ; Tokunaga, Kazuaki ; Koyu, Kaoru ; Kubo, Maki ; Udo, Tsutomu ; Seto, Motoshi ; Ohhata, Kenichi ; Hosoe, Hideyuki ; Kiyota, Yukihiro ; Washio, Katsuyoshi ; Hashimoto, Takashi

Author_Institution

Device Dev. Center, Hitachi Ltd., Tokyo, Japan

fYear

2003

fDate

28-30 Sept. 2003

Firstpage

107

Lastpage

110

Abstract

A thin and heavily-boron-doped SiGe:C base was selectively grown by low pressure chemical vapour deposition (LPCVD). To achieve high-speed performance, we performed carbon doping in the base region and studied as-grown intrinsic base width scaled-down toward a thickness of 1 nm with high SiGe-epi process stability and high transistor yield. We achieved f_T/f_MAX of 170/204 GHz maximum clock frequency of 16:1 MUX in this HBT.

Keywords

boron; carbon; chemical vapour deposition; emitter-coupled logic; epitaxial growth; heterojunction bipolar transistors; semiconductor device manufacture; silicon compounds; 1 nm; 170 GHz; 204 GHz; 5 ps; ECL gate delay; LPCVD; SiGe:B; SiGe:C; as-grown intrinsic base width; base region; carbon doping; clock frequency; emitter coupled delay; heterojunction bipolar transistor; low pressure chemical vapour deposition; process stability; thin base HBT; transistor yield; Boron; CVD; Carbon; Emitter coupled logic; Epitaxial growth; Heterojunction bipolar transistors; Semiconductor device manufacture; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the

ISSN

1088-9299

Print_ISBN

0-7803-7800-8

Type

conf

DOI

10.1109/BIPOL.2003.1274946

Filename

1274946