DocumentCode
405666
Title
Observation of coherent interfacial optical phonons in III-V semiconductor nanostructures
Author
Chang, Y.-M. ; Chang, N.-A. ; Lin, H.H. ; Chia, C.-T. ; Chen, Y.F.
Author_Institution
Center for Condensed Matter Sci., Nat. Taiwan Univ., Taiwan
Volume
2
fYear
2003
fDate
15-19 Dec. 2003
Abstract
We report the coherent phonon spectroscopy of InGaP-GaAs-InGaP SQWs, in which a localized interfacial optical phonon is identified. The GaAs-InGaP heterointerface quality can be characterized by measuring the dephasing time of this interfacial phonon mode.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; nanostructured materials; phonon spectra; phonon-defect interactions; phonon-phonon interactions; semiconductor heterojunctions; semiconductor quantum wells; III-V semiconductors; InGaP-GaAs; coherent interfacial optical phonons; coherent phonon spectroscopy; dephasing time; heterointerface; interfacial phonon mode; nanostructures; Gallium arsenide; III-V semiconductor materials; Optical buffering; Optical pumping; Optical scattering; Phonons; Raman scattering; Semiconductor nanostructures; Spectroscopy; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1277030
Filename
1277030
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