Title :
Optimised high voltage IGBTs for pulsed power applications
Author :
Golland, A. ; Wakeman, F.J. ; Li, G.
Author_Institution :
Westcode Semicond. Ltd., Chippendale, UK
Abstract :
A new range of high voltage Insulated Gate Bi-polar Transistors (IGBTs) is presented which have been optimised for pulsed power applications. The devices, rated for blocking voltages up to 5.2 kV, are based on punch through (PT) technology and have been optimised to maximise forward transconductance. This optimisation allows the device to operate at very high levels of pulsed collector current when compared to conventional IGBT technology. The design, construction and performance of a fully integrated five terminal switch assembly based on the abovementioned device is then discussed.
Keywords :
insulated gate bipolar transistors; optimisation; power semiconductor switches; pulsed power technology; 5.2 kV; IGBT; blocking voltages; five terminal switch assembly; forward transconductance; insulated gate bi-polar transistors; optimisation; pulsed collector current; pulsed power applications; punch through technology; Assembly; Current density; Insulated gate bipolar transistors; Petroleum; Power semiconductor devices; Power semiconductor switches; Pulse power systems; Semiconductor device packaging; Thyristors; Voltage;
Conference_Titel :
Pulsed Power Conference, 2003. Digest of Technical Papers. PPC-2003. 14th IEEE International
Conference_Location :
Dallas, TX, USA
Print_ISBN :
0-7803-7915-2
DOI :
10.1109/PPC.2003.1277676
