DocumentCode
40649
Title
Analytical relationship between subthreshold swing of thermionic and tunnelling currents
Author
Hiblot, Gaspard ; Rafhay, Quentin ; Boeuf, F. ; Ghibaudo, Gerard
Author_Institution
STMicroelectron., Crolles, France
Volume
50
Issue
23
fYear
2014
fDate
11 6 2014
Firstpage
1745
Lastpage
1747
Abstract
An analytical relationship between the subthreshold swing of the thermionic current and the tunnelling current is derived for double-gate metal-oxide semiconductor field-effect transistors (MOSFETs), based on the Wentzel-Kramers-Brillouin approximation. This formula allows predicting the behaviour of an ultimately scaled MOSFET in the subthreshold regime, as well as the performance of III-V devices.
Keywords
MOSFET; tunnelling; III-V devices; Wentzel-Kramers-Brillouin approximation; double-gate MOSFETs; metal-oxide semiconductor field-effect transistors; subthreshold swing; thermionic current; tunnelling current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2014.3206
Filename
6955168
Link To Document