Trends in power electronics and motor drives

Author

Akagi, Hirofumi

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan

Volume

1

fYear

2003

fDate

17-20 Nov. 2003

Firstpage

1

Abstract

The emergence of power semiconductor devices such as insulated-gate bipolar transistors (IGBTs) or injection-enhanced gate transistors (IEGTs) and gate-commutated turn-off (GCT) thyristors or integrated gate-commutated thyristors (IGCTs) enables power conversion systems to expand into utility and industry applications. Much attention has been paid to power switching devices based on wide-bandgap semiconductors such as silicon carbide(SiC). These devices are expected to have the following advantages over silicon devices; low switching and conduction losses, especially in power conversion systems operating as high as, or exceeding 600 V. This paper describes trends in power electronics and motor drives, including the personal views and expectations of the author.

Keywords

insulated gate bipolar transistors; motor drives; power conversion; silicon compounds; thyristors; wide band gap semiconductors; conduction losses; gate-commutated turn-off thyristors; injection-enhanced gate transistors; insulated-gate bipolar transistors; integrated gate-commutated thyristors; motor drives; power conversion systems; power electronics; power semiconducting devices; power semiconductor devices; power switching devices; wide-bandgap semiconductors; Industry applications; Insulated gate bipolar transistors; Insulation; Motor drives; Power conversion; Power electronics; Power semiconductor devices; Power semiconductor switches; Silicon; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Drive Systems, 2003. PEDS 2003. The Fifth International Conference on

Print_ISBN

0-7803-7885-7

Type

conf

DOI

10.1109/PEDS.2003.1282661

Filename

1282661