Title :
A new semi-empirical model for funneling assisted drain currents due to single events
Author :
Abadir, G.B. ; Fikry, W. ; Ragai, H.F. ; Omar, O.A.
Author_Institution :
Fac. of Eng., Ain Shams Univ., Cairo, Egypt
Abstract :
We present a new semi-empirical model for the funneling-assisted currents due to single events. It is then used to predict the collected charge due to the funneling process. Comparison with previously published simulated data using ISE CAD tools has shown that the relative error in the collected charge prediction is of about 0.8%. This model can be used for circuit simulations in space applications.
Keywords :
MOSFET; circuit simulation; semiconductor device models; circuit simulations; funneling assisted drain currents; funneling process; relative error; semiempirical model; Charge carrier density; Charge carrier processes; Circuit simulation; Delay; Electrons; Particle tracking; Plasma density; Plasma materials processing; Predictive models; Radiation effects;
Conference_Titel :
Microelectronics, 2003. ICM 2003. Proceedings of the 15th International Conference on
Print_ISBN :
977-05-2010-1
DOI :
10.1109/ICM.2003.1287847
