A Novel 1.2–V 4.5-ppm/°C Curvature-Compensated CMOS Bandgap Reference

This paper proposes a novel CMOS bandgap reference (BGR) with high-order curvature-compensation by using MOS transistors operating in weak inversion region. The mechanism of the proposed curvature-compensation technique is analyzed thoroughly and the corresponding BGR circuit was implemented in standard CMOS 0.18 μm technology. The experimental results show that the proposed BGR achieves 4.5 ppm/°C over the temperature range of -40°C to 120°C at 1.2 V supply voltage. It consumes only 36 μA. In addition, it achieves line regulation performance of 0.054%/V. It is suitable for low-power applications requiring references with high precision.