DocumentCode :
410194
Title :
Distribution of the dynamic strain and stress components within a layered film of a SAW resonator on LiTaO3
Author :
Kubat, F. ; Ruile, W. ; Hesjedal, T. ; Stotz, J. ; Rösler, U. ; Reindl, L.
Author_Institution :
Inst. of Electr. Inf. Technol., Clausthal Univ. of Technol., Germany
Volume :
1
fYear :
2003
fDate :
5-8 Oct. 2003
Firstpage :
312
Abstract :
Based on recent reports about the acoustical power distribution in SAW resonators we present an analytical method to determine the distribution of the dynamic strain and stress components in SAW resonators on LiTaO3. This enables us to calculate the absolute strain and stress values for each point in the layer of a resonator for any driving condition and frequency. The SAW resonator is described by a P-Matrix based model, which gives us the distribution of the potential power and the resulting energy density. For calculation of the relative strain and stress values we used the partial wave method. Using the correlation between the total acoustic power and the energy density distribution normal to the substrate surface, we can calculate the strain and stress values for a given input power. For the direct experimental verification of our calculations we measured the SAW induced displacements as a function of input power.
Keywords :
aluminium; metallic thin films; monolayers; stress-strain relations; surface acoustic wave resonators; Al; Al layered film; LiTaO3; LiTaO3 substrate; P-matrix based model; SAW resonator; acoustic power; acoustical power distribution; energy density distribution; partial wave method; potential power; stress-strain component; Acoustic measurements; Capacitive sensors; Power distribution; Power measurement; Pulse width modulation; Strain measurement; Stress; Surface acoustic wave devices; Surface acoustic waves; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics, 2003 IEEE Symposium on
Print_ISBN :
0-7803-7922-5
Type :
conf
DOI :
10.1109/ULTSYM.2003.1293413
Filename :
1293413
Link To Document :
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