Transient Sensitivity of Sectorial Split-Drain Magnetic Field-Effect Transistor

Author

Zhenyi Yang ; Sik-Lam Siu ; Wing-Shan Tam ; Chi-Wah Kok ; Chi-Wah Leung ; Lai, P.T. ; Hei Wong ; Pong, W.T.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China

Volume

49

Issue

7

fYear

2013

fDate

Jul-13

Firstpage

4048

Lastpage

4051

Abstract

This paper proposed an analytical model on the geometric dependence of the transient sensitivity and transient sensing hysteresis of sectorial split-drain magnetic field-effect transistors (SD-MAGFETs). We also conjectured that the transient sensing hysteresis is caused by the charge trapped on channel boundary, and is also geometric dependent. Experimental results are presented which show good consistence with the analytical derivation. The derived analytical model and experimental results can be used as a design guideline for the optimization and trade-off of the transient sensitivity and transient sensing hysteresis of the sectorial SD-MAGFETs.

Keywords

field effect transistors; magnetic field measurement; magnetic hysteresis; magnetic sensors; optimisation; analytical derivation; analytical model; channel boundary; design guideline; geometric dependence; optimization; sectorial split-drain magnetic field-effect transistor; transient sensing hysteresis; transient sensitivity; Charge carrier processes; Magnetic hysteresis; Magnetometers; Saturation magnetization; Sensitivity; Sensors; Transient analysis; Hysteresis; magnetic field-effect transistor (MAGFET); sectorial; sensitivity; split-drain; transient sensitivity;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2013.2241034

Filename

6559182