DocumentCode
411673
Title
Progress in type-I In(Al)GaAsSb/GaSb diode lasers with >2.5 /spl mu/m
Author
Shterengas, L. ; Kim, J.G. ; Belenky, G. ; Martinelli, R.
Author_Institution
State Univ. of New York, Stony Brook, NY, USA
fYear
2003
fDate
6-6 June 2003
Abstract
Type-I InGaAsSb QW/spl lambda/=2.8 /spl mu/m diode lasers were developed. They output 40 mW CW at 20/spl deg/C and more than 1 W peak power . Room temperature photoluminescence with /spl lambda//sub peak/>3 /spl mu/m was measured from similar laser structures.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; photoluminescence; quantum well lasers; 1 W; 2.8 micron; 20 C; 40 mW; AlGaAsSb-GaSb; InGaAsSb; InGaAsSb-GaSb; diode lasers; laser structure; photoluminescence; room temperature; Diode lasers; Gas lasers; Optical design; Optical losses; Optical pulses; Optical waveguides; Pump lasers; Semiconductor lasers; Temperature; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-748-2
Type
conf
Filename
1297752
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