DocumentCode
411882
Title
Broadly tunable external-cavity semiconductor lasers in optical-communication band using Fabry-Perot laser diodes without antireflection coating
Author
Su, Yi-Shin ; Chu, Fei-Hung ; Lin, Ching-Fuh
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2003
fDate
6-6 June 2003
Abstract
Using proper quantum-well structure, carriers distribute over a broad bandwidth, suppressing self-oscillation of uncoated Fabry-Perot laser diodes, but still providing gain for external-cavity configuration. Then broadband tuning range of 200 nm is achieved.
Keywords
Fabry-Perot resonators; antireflection coatings; laser cavity resonators; laser tuning; optical communication; semiconductor lasers; semiconductor quantum wells; 200 nm; antireflection coating; carriers distribution; optical-communication band; quantum-well structure; self-oscillation suppression; tunable external-cavity semiconductor lasers; uncoated Fabry-Perot laser diodes; Bandwidth; Coatings; Diode lasers; Fabry-Perot; Laser tuning; Optical pumping; Quantum well devices; Semiconductor lasers; Threshold current; Tunable circuits and devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-748-2
Type
conf
Filename
1298029
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