Title :
Monolithic integration of dual layer optics on broad area semiconductor lasers
Author :
Vaissié, Laurent ; Mohammed, Waleed ; Johnson, E.G.
Author_Institution :
Sch. of Opt., Central Florida Univ., Orlando, FL, USA
Abstract :
A broad area InGaAs semiconductor laser diode with two monolithically integrated optical elements, a 275 nm period diffraction grating and multilevel refractive lens, is presented. We discuss the potential of dual optics integration for beam shaping of high power lasers and amplifiers.
Keywords :
diffraction gratings; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; laser beams; lenses; optical fabrication; semiconductor lasers; 275 nm; InGaAs; beam shaping; broad area InGaAs semiconductor laser diode; dual layer optics; high power amplifiers; high power lasers; monolithically integrated optical elements; multilevel refractive lens; period diffraction grating; Diode lasers; Indium gallium arsenide; Integrated optics; Monolithic integrated circuits; Optical beams; Optical diffraction; Optical refraction; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-748-2
