DocumentCode
411885
Title
High-power 2.1 W CW-operation of 650 nm laser diodes grown by solid-source molecular beam epitaxy
Author
Tukiainen, A.T. ; Toikkanen, L.J. ; Hirvonen, I.A.T. ; Pessa, M. ; Tihanyi, P.L.
Author_Institution
Optoelectron. Res. Centre, Tampere Univ. of Technol., Finland
fYear
2003
fDate
6-6 June 2003
Abstract
We report on a very high-power red laser diodes producing over two watts continuous-wave operation. Preliminary tests show no catastrophic optical damage. Devices have a low threshold current density and high slope efficiency.
Keywords
current density; molecular beam epitaxial growth; semiconductor lasers; 2.1 W; 650 nm; catastrophic optical damage; continuous wavelength operation; high-power red laser diodes; laser diodes; slope efficiency; solid-source molecular beam epitaxy; threshold current density; Biomedical optical imaging; Diode lasers; Molecular beam epitaxial growth; Optical buffering; Optical devices; Optical pumping; Optical recording; Power generation; Testing; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-748-2
Type
conf
Filename
1298032
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