DocumentCode
411889
Title
The impact of strain on the spontaneous emission from self assembled quantum dot laser diodes
Author
Tan, K.T. ; Wonfor, A. ; Penty, R.V. ; White, I.R. ; Schliwa, A. ; Bimberg, D. ; Kovsh, A.R. ; Ustinov, V.M. ; Zhukov, A.E.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
fYear
2003
fDate
6-6 June 2003
Abstract
The effect of strain in laser diodes with pyramidal quantum dots has been experimentally studied and theoretically modelled. Strongly polarised injection luminescence with extinction ratios as high as 18 dB is observed even at 1% threshold current.
Keywords
light polarisation; photoluminescence; quantum dot lasers; spontaneous emission; extinction ratios; laser diodes; polarised injection luminescence; pyramidal quantum dots; quantum dot laser diodes; spontaneous emission; strain effect; threshold current; Capacitive sensors; Diode lasers; Gallium arsenide; Laser modes; Laser theory; Optical polarization; Quantum dot lasers; Spontaneous emission; Tellurium; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-748-2
Type
conf
Filename
1298036
Link To Document