Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation

Author

Zhiqiang Li ; Xia An ; Min Li ; Quanxin Yun ; Meng Lin ; Ming Li ; Xing Zhang ; Ru Huang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

34

Issue

5

fYear

2013

fDate

May-13

Firstpage

596

Lastpage

598

Abstract

In this letter, co-implantation of P and Sb dopants into NiGe film is first proposed to improve the characteristic of NiGe/Ge contact. Through this technique, obvious enhancement of NiGe thermal stability is achieved. The surface morphology of NiGe film even keeps smooth and flat after post-germanidation annealing up to 600°C. The current characteristics of the formed NiGe/p-Ge diodes are also improved, exhibiting better rectifying performance. It is believed that the improved interface quality and the enhanced dopant activation contribute to these improvements. Therefore, this technique shows great potential for high performance Ge device technology.

Keywords

annealing; electrical contacts; semiconductor doping; thermal stability; dopants co-implantation; electrical contacts; electrical performance; morphology; post-germanidation annealing; thermal stability; Antimony; Ge MOSFET; NiGe; thermal stability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2252458

Filename

6490005