DocumentCode
412143
Title
Microdisks with quantum dot active regions lasing near 1300 nm at room-temperature
Author
Yang, T. ; Cao, J. ; Lee, P. ; Shih, M. ; Shafiiha, R. ; Farrell, S. ; O´Brien, J. ; Shchekin, O. ; Deppe, D.
Author_Institution
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
fYear
2003
fDate
6-6 June 2003
Abstract
Lasing near 1300 nm in microdisks with InAs quantum dot active regions is reported for the first time. The microdisks were optically pumped at room temperature, and lasing occurred in devices that are 2.5 /spl mu/m in diameter and larger.
Keywords
indium compounds; microdisc lasers; optical pumping; semiconductor quantum dots; 1300 nm; 2.5 micron; 293 to 298 K; InAs; InAs quantum dot active regions; lasing process; microdisks; optical pumping; Electron optics; Gallium arsenide; Optical buffering; Optical pumping; Quantum dot lasers; Quantum dots; Resonance; Stimulated emission; Temperature; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-748-2
Type
conf
Filename
1298292
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