• DocumentCode
    413387
  • Title

    Experimental investigation of transient processes in single crystal Si solar cell panels

  • Author

    Slonim, Michael A. ; Slonim, Alexander A.

  • Author_Institution
    Ben Gurion Univ. of the Negev, Beer Sheva, Israel
  • Volume
    3
  • fYear
    2003
  • fDate
    18-18 May 2003
  • Firstpage
    2494
  • Abstract
    Three photo-voltaic commercial panels based on single crystal silicon solar cells are analyzed. Two types of transients are observed: an instantaneous short-circuiting and an instantaneous open-circuiting. It is shown that the transient currents under the short-circuiting has character of damped oscillations and the transient voltages under the open-circuiting rise exponentially for all types of solar cell panels. The results obtained cannot be explained by the currently used equivalent diagrams.
  • Keywords
    elemental semiconductors; photovoltaic cells; semiconductor device models; short-circuit currents; silicon; solar cells; damped oscillations; elemental semiconductor; instantaneous open circuiting; instantaneous short circuiting; photovoltaic commercial panels; semiconductor device models; single crystal Si solar cell panels; transient currents; transient voltages;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-9901816-0-3
  • Type

    conf

  • Filename
    1305098