Title :
Experimental investigation of transient processes in single crystal Si solar cell panels
Author :
Slonim, Michael A. ; Slonim, Alexander A.
Author_Institution :
Ben Gurion Univ. of the Negev, Beer Sheva, Israel
Abstract :
Three photo-voltaic commercial panels based on single crystal silicon solar cells are analyzed. Two types of transients are observed: an instantaneous short-circuiting and an instantaneous open-circuiting. It is shown that the transient currents under the short-circuiting has character of damped oscillations and the transient voltages under the open-circuiting rise exponentially for all types of solar cell panels. The results obtained cannot be explained by the currently used equivalent diagrams.
Keywords :
elemental semiconductors; photovoltaic cells; semiconductor device models; short-circuit currents; silicon; solar cells; damped oscillations; elemental semiconductor; instantaneous open circuiting; instantaneous short circuiting; photovoltaic commercial panels; semiconductor device models; single crystal Si solar cell panels; transient currents; transient voltages;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3