Crystallization of Si/SiO/sub 2/ superlattices for photovoltaics

Author

Xia, J.A. ; Cho, E.C. ; Green, M.A. ; Corkish, R.

Author_Institution

Centre of Excellence for Adv. Silicon Photovoltaics & Photonics, New South Wales Univ., Sydney, NSW, Australia

Volume

3

fYear

2003

fDate

18-18 May 2003

Firstpage

2694

Abstract

In this study, Si/SiO/sub 2/ superlattice materials were fabricated by radio frequency (RF) Si sputtering and reactive oxide deposition. The samples were prepared with different numbers of bi-layers (Si/SiO/sub 2/ layers). The deposited materials were crystallized by furnace annealing or rapid thermal annealing (RTA). The microstructures of the materials were observed by transmission electron microscopy (TEM). The crystallization of the materials was studied by high resolution TEM and Raman spectroscopy. The relationship between the crystallization and processing conditions is discussed.

Keywords

Raman spectra; crystal microstructure; crystallisation; elemental semiconductors; photovoltaic cells; rapid thermal annealing; semiconductor growth; semiconductor superlattices; silicon; silicon compounds; sputter deposition; transmission electron microscopy; RTA; Raman spectroscopy; Si-SiO/sub 2/; Si-SiO/sub 2/ superlattice material; TEM; crystallization; furnace annealing; microstructure; photovoltaics; radio frequency Si sputtering; rapid thermal annealing; reactive oxide deposition; transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1305146