DocumentCode
413444
Title
3C-SiC as a future photovoltaic material
Author
Richards, Bryce S. ; Lambertz, Andreas ; Corkish, Richard P. ; Zorman, Christian A. ; Mehregany, Mehran ; Ionescu, Mihai ; Green, Martin A.
Author_Institution
Centre of Excellence for Adv. Silicon Photovoltaic & Photonics, Univ. of New South Wales, Sydney, NSW, Australia
Volume
3
fYear
2003
fDate
18-18 May 2003
Firstpage
2738
Abstract
Cubic silicon carbide (3C-SiC) is being investigated for two third generation photovoltaic (PV) devices - the impurity photovoltaic (IPV) solar cell, and a silicon carbide/silicon superlattice structure for the upper cell in a tandem solar cell.
Keywords
amorphous semiconductors; elemental semiconductors; photoluminescence; photovoltaic cells; semiconductor superlattices; semiconductor thin films; silicon; silicon compounds; solar cells; wide band gap semiconductors; SiC-Si; cubic silicon carbide; impurity photovoltaic solar cell; photoluminescence; photovoltaic material; silicon carbide-silicon superlattice structure; tandem solar cell; third generation photovoltaic devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305157
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