Title :
Potentially modulated multi-quantum well solar cells with improved dark current characteristics
Author :
Shiotsuka, Naoyuki ; Takeda, Toru ; Okada, Yoshitaka
Author_Institution :
Inst. of Appl. Phys., Tsukuba Univ., Japan
Abstract :
The predicted performance of multi-quantum well (MQW) solar cells relies not only on a high material quality with minimum non-radiative recombination losses at QWs heterointerfaces, but also an efficient escape rate of photo-generated carriers out of QWs into the "base" region with minimum radiative losses within QWs. We propose and investigate potentially modulated InGaAs/GaAs MQW solar cells, for which the MQW structure is modified from a series of conventional square-shaped QWs to step-like modulated QWs. We show that radiative recombination and forward-bias dark currents are significantly reduced in potentially modulated MQW solar cells.
Keywords :
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; photoluminescence; quantum well devices; solar cells; GaAs; InGaAs-GaAs; InGaAs-GaAs MQW solar cells; QW heterointerface; forward-bias dark currents; nonradiative recombination loss; photogenerated carriers; photoluminescence; potentially modulated multiple quantum well solar cells; square-shaped QW; step-like modulated QW;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3