Real-time studies of nucleation and interface formation in microcrystalline silicon growth

We have studied nucleation and interface formation in microcrystalline Si (/spl mu/c-Si:H) growth by applying real-time diagnostic techniques. We have demonstrated that a high intrinsic stress in the amorphous phase is essential for /spl mu/c-Si:H nucleation. Detailed studies revealed the unique role of H for stress generation and /spl mu/c-Si:H nucleation. In the /spl mu/c-Si:H growth performed on ZnO substrate at high H dilution conditions, however, a porous interface layer is formed at the /spl mu/c-Si:H/ZnO interface. Experimental results obtained from real-time SE and ATR showed that the chemical reduction of ZnO by H suppresses the chemical reactivity on the ZnO surface and prevents /spl mu/c-Si:H nucleation on the substrate at the initial stage. Based on the above results, we review the nucleation and interface formation processes in /spl mu/c-Si:H growth.