DocumentCode
413493
Title
Molybdenum-doped indium oxide deposited by radio-frequency magnetron sputtering and pulsed laser deposition
Author
Yoshida, Y. ; Warmsingh, C. ; Gessert, T.A. ; Young, D.L. ; Wood, D.M. ; Perkins, J.D. ; Ginley, D.S. ; Coutts, T.J.
Author_Institution
Colorado Sch. of Mines, Golden, CO, USA
Volume
1
fYear
2003
fDate
18-18 May 2003
Firstpage
34
Abstract
Thin-films of molybdenum-doped indium oxide (IMO), an n-type transparent conducting oxide, were deposited using radio-frequency (RF) magnetron sputtering and pulsed laser deposition (PLD). To date, sputtered and PLD IMO films have exhibited mobilities as high as 45 and 127 cm/sup 2/V/sup -1/s/sup -1/. Temperature-dependent Hall measurements were done on both sputtered and PLD films to study scattering mechanisms. In addition, four transport coefficient measurements (conductivity, Hall, Nernst, and Seebeck coefficients) were conducted to extract the transport properties of IMO. Temperature-dependent Hall measurements on PLD and sputtered films suggest the mobility is limited by phonon and ionized impurity scattering, respectively. From the method of four coefficients, the density-of-states effective-mass value of IMO was found to increase from /spl sim/0.25m/sub e/ to /spl sim/0.4m/sub e/ as carrier concentration varied from 3.6/spl times/10/sup 19/ to 6.5/spl times/10/sup 20/cm/sup -3/.
Keywords
Hall effect; Seebeck effect; carrier mobility; effective mass; impurity scattering; indium compounds; molybdenum; phonon-impurity interactions; pulsed laser deposition; semiconductor materials; semiconductor thin films; sputter deposition; thermomagnetic effects; Hall coefficient; In/sub 2/O/sub 3/:Mo; Nerst coefficient; Seebeck coefficient; carrier concentration; density-of-states; effective-mass value; ionized impurity scattering; mobility; molybdenum-doped indium oxide; n-type transparent conducting oxide; phonon scattering; pulsed laser deposition; radio-frequency magnetron sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305213
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